- Tel：+86 0755-28329695 / +86 0510-85590779
- Email：info@kahkee-instrument.com
In PEALD equipment, plasma is generated using radio frequency (RF) or microwaves. The highly reactive particles in the plasma enhance the chemical activity of the reactants, promote chemical reactions, lower reaction temperatures, improve film quality and deposition rate, and enhance film uniformity and density.
PEALD is widely used in the semiconductor industry, optoelectronics, microelectromechanical systems, biomedicine, and other fields.
| Index | Specifications |
|---|---|
| Wafer size | 8 inch |
| Film thickness uniformity | 3% within wafer, 2% batch-to-batch @ 30 nm |
| 5% within wafer, 4% batch-to-batch @ 10 nm | |
| Substrate-to-plasma distance | >60 mm, adjustable |
| Vacuum base pressure | 1 Pa |
| Vacuum rise rate | 0.3 Pa/h |
| Source bottle and pipeline temperature control accuracy | Source bottle temperature control accuracy: ±1°C |
| Heating cable temperature control accuracy: ±2.5°C |
Address: No. 1, Jikang Road, Kengzi Subdistrict, Pingshan District, Shenzhen, Guangdong Province
Hotline: +86 0755-28329695 / +86 0510-85590779
Email: info@kahkee-instrument.com
