- Tel：+86 0755-28329695 / +86 0510-85590779
- Email：info@kahkee-instrument.com
This advanced device is used to precisely deposit thin films on substrate surfaces. Utilizing atomic layer deposition (ALD) technology, the system deposits thin films layer by layer by alternately introducing different chemical vapor precursors, which undergo a self-limiting chemical reaction on the substrate surface. It offers highly precise thickness control, excellent uniformity, good conformality, low-temperature deposition capability, and a wide variety of materials.
| Item | Parameters |
|---|---|
| Substrate size | 8-inch, compatible with the following sizes |
| Substrate type | Si, LN, LT, SiC, GaAs, GaN, etc. |
| Sample transport | Wafer cassette, fully automated atmospheric robotic arm transfer + sample cooling station |
| Sample temperature | 50-300°C, temperature control accuracy: ±0.5°C, sample temperature uniformity: ±2°C at 200°C |
| Precursor sources | 4 precursor sources, including 2 heating sources and 1 water source, with optional ozone and ammonia systems |
| ALD valve | Swagelock fast, high-temperature ALD valve, temperature resistance: 200°C, response time: 10 ms |
| Carrier gas system | Fully independent purge system controlled by a high-precision nitrogen mass flowmeter |
| Control system | Windows 10-based touchscreen operating system, compatible with MES systems |
| System ultimate vacuum | ≤20 mTorr (with dry pump) |
| System leak rate | ≤5*10-10 Pa*m3/s (standard helium leak test) |
| Deposition non-uniformity | ≤±1%@20 nm Al2O3 |
| Deposition materials | Oxides: Al2O3, HfO2, ZrO2, TiO2, SiO2, ZnO, SnO2, etc. |
| Nitrides: AlN, TiN, TaN, SiN, etc. |
Address: No. 1, Jikang Road, Kengzi Subdistrict, Pingshan District, Shenzhen, Guangdong Province
Hotline: +86 0755-28329695 / +86 0510-85590779
Email: info@kahkee-instrument.com
